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| Light Emitting Diode(InGaAlP/InGaN) KLP-56M DIMENSIONS KLP-56M is a 3 in 1 full colour LED. Features * Transparent epoxy Encapsulent * High Optical Output Applications * Display * Indicator * Signage Pin Connection 1. Cathode(Red) 2. Cathode(Green) 3. Cathode(Blue) 4. Anode(Red) 5. Anode(Green) 6. Anode(Blue) Maximum Ratings Parameter Reverse Voltage Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature *2. Soldering time 5 Sec *2 *1 [ Ta=25C ] Symbol VR IF IFP PD Topr. Tstg. Tsol. Ratings 5 30 0.1 90 -30 ~ +85 -40 ~ +105 260 Unit V mA A mW C C C Operating temperature *1. IFP Measured under duty 1/10 @ 1KHz Electro-Optical Characteristics Parameter Forward voltage Optical Output Power Doninant Wave Length Spectral half bandwidth Half angle Symbol VF Iv d Conditions IF = 20 mA/Die IF = 20 mA/Die IF = 20 mA/Die IF = 20 mA/Die IF = 20 mA/Die Typical Value RED 2 300 630 20 GREEN 3.3 750 525 30 120 BLUE 3.2 200 470 25 - [ Ta=25C ] Unit V mW nm nm deg. 1/2 Light Emitting Diode(InGaAlP/InGaN) KLP-56M Forward current vs. Ambient temperature Forward current IF(mA), Each Chip (IF) 50 40 30 20 10 0 () 100 0 0 5 10 15 20 25 30 (IF) 35 1.5 Radiant Intensity vs. Forward current Relative intensity 0 20 40 60 80 1 0.5 Ambient temperature Ta Forward current IF Relative radiant intensity vs. Ambient temperature 1.2 Relative radiant intensity PO 1 Intensity [arb.] 10 Relative intensity vs. Wavelength B G R 0.8 0.6 0.4 0.2 1 0.1 -20 0 20 40 60 80 100 () 0 400 450 500 550 600 650 700 Wave Length[nm] Ambient temperature Ta Forward current vs. Forward voltage () 30 Radiant Pattern Angle(deg) R G/B Forward current IF + 60 25 20 15 10 +4 0 +20 0 -20 -4 0 -6 0 50 -80 -100 + 1 00 5 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 + 80 0 100 50 50 0 0 100 Forward voltage VF Relative intensity(%) 2/2 |
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